IPB038N12N3GATMA1
In Stock
See product data sheet for exact product image.
Manufacturer:Infineon
Category:Discretes
Description:Power Field-Effect Transistor, 120A I(D), 120V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Datasheet
Contact Support
Share PostYour Price : $1.99
Your Price : $1.99
Buy More and Save! Reference pricing table.
Infineon
In Stock: 225
Pricing
Pricing, availability and lead-times are subject to verification at time of order.
Manufacturer OPN
IPB038N12N3GATMA1
Manufacturer
Infineon
Manufacturer Order Code
SP000694160
Generic PN
XPB038N12
Manufacturer Life Cycle
NRND
Package Type
PG-TO263-3
Package Pin Count
3
RoHS Compliance
Yes
Lead Free
No
Packaging Type
Tape & Reel
Packaging Quantity
1000
Technology Category
Discretes
Technology Subcategory
Transistor
Technology Group
MOSFETs/FETs
US HTS Code
8541.29.0055
ECCN
EAR99
Manufacturers
© 2026 Rochester Electronics. All Rights Reserved.
Privacy Policy | Cookie Policy | Terms and Conditions | GDPR Policy | Slavery and Human Trafficking Statement
