IPB123N10N3GATMA1
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Manufacturer:Infineon
Category:Discretes
Description:Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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Infineon
In Stock: 24
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Manufacturer OPN
IPB123N10N3GATMA1
Manufacturer
Infineon
Manufacturer Order Code
SP000485968
Generic PN
XPB123N10
Manufacturer Life Cycle
EOL/LTB
PDN Number
PD_106_25
Last Time Buy
9-30-2025
Last Time Ship
3-31-2026
Package Type
PG-TO263-3
Package Pin Count
3
RoHS Compliance
Yes
Lead Free
No
Packaging Type
Tape & Reel
Packaging Quantity
1000
Technology Category
Discretes
Technology Subcategory
Transistor
Technology Group
MOSFETs/FETs
US HTS Code
8541.29.0055
ECCN
EAR99
Manufacturers
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